STF57N65M5 Datasheet and Replacement
Type Designator: STF57N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
Package: TO-220FP
STF57N65M5 substitution
STF57N65M5 Datasheet (PDF)
stb57n65m5 stf57n65m5 sti57n65m5 stp57n65m5.pdf

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET in IPAK, TO-220, TO-220FP and DPAK packagesDatasheet production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max313STB57N65M521DPAKSTF57N65M5710 V
Datasheet: STF40N20 , STF40N60M2 , STF40N65M2 , STF40NF03L , STF45N10F7 , STF45N65M5 , STF4N80K5 , STF4NK50ZD , 20N60 , STF5N105K5 , STF5N60M2 , STF5N95K5 , STF6N60M2 , STF6N65M2 , STF6N80K5 , STF6NK50Z , STF6NM60N .
History: CTD04N004 | P2610BT | DMN3035LWN | AP6679GS-A | TSM4N80CI | IPB34CN10N | FQD2N50TF
Keywords - STF57N65M5 MOSFET datasheet
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History: CTD04N004 | P2610BT | DMN3035LWN | AP6679GS-A | TSM4N80CI | IPB34CN10N | FQD2N50TF



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