STF80N10F7 Datasheet. Specs and Replacement

Type Designator: STF80N10F7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-220FP

STF80N10F7 substitution

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STF80N10F7 datasheet

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 std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf pdf_icon

STF80N10F7

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID PTOT TJmax max 1 DPAK 3 STD80N10F7 0.01 70 A 85 W 2 1 TO-220FP STF80N10F7 0.01 40 A 30 W 100 V TAB TAB STH80N10F7-2 0.0095 80 A... See More ⇒

Detailed specifications: STF6N80K5, STF6NK50Z, STF6NM60N, STF7N105K5, STF7N60M2, STF7N65M2, STF7N80K5, STF7NM50N, IRF3710, STF8N80K5, STF8NK85Z, STF8NM60N, STF9HN65M2, STF9N60M2, STF9N65M2, STF9NK80Z, STF9NM50N

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