All MOSFET. STF80N10F7 Datasheet

 

STF80N10F7 Datasheet and Replacement


   Type Designator: STF80N10F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220FP
 

 STF80N10F7 substitution

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STF80N10F7 Datasheet (PDF)

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 std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf pdf_icon

STF80N10F7

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A

Datasheet: STF6N80K5 , STF6NK50Z , STF6NM60N , STF7N105K5 , STF7N60M2 , STF7N65M2 , STF7N80K5 , STF7NM50N , P55NF06 , STF8N80K5 , STF8NK85Z , STF8NM60N , STF9HN65M2 , STF9N60M2 , STF9N65M2 , STF9NK80Z , STF9NM50N .

History: TPCA8050-H

Keywords - STF80N10F7 MOSFET datasheet

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