STF9HN65M2 PDF and Equivalents Search

 

STF9HN65M2 Specs and Replacement

Type Designator: STF9HN65M2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.6 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm

Package: TO-220FP

STF9HN65M2 substitution

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STF9HN65M2 datasheet

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 stf9hn65m2.pdf pdf_icon

STF9HN65M2

STF9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1 Applications TO-220FP Switching appli... See More ⇒

Detailed specifications: STF7N60M2, STF7N65M2, STF7N80K5, STF7NM50N, STF80N10F7, STF8N80K5, STF8NK85Z, STF8NM60N, 2N7000, STF9N60M2, STF9N65M2, STF9NK80Z, STF9NM50N, STFI10N62K3, STFI10N65K3, STFI11N65M2, STFI12N60M2

Keywords - STF9HN65M2 MOSFET specs

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