All MOSFET. STF9HN65M2 Datasheet

 

STF9HN65M2 Datasheet and Replacement


   Type Designator: STF9HN65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
   Package: TO-220FP
 

 STF9HN65M2 substitution

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STF9HN65M2 Datasheet (PDF)

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STF9HN65M2

STF9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching appli

Datasheet: STF7N60M2 , STF7N65M2 , STF7N80K5 , STF7NM50N , STF80N10F7 , STF8N80K5 , STF8NK85Z , STF8NM60N , IRF9540 , STF9N60M2 , STF9N65M2 , STF9NK80Z , STF9NM50N , STFI10N62K3 , STFI10N65K3 , STFI11N65M2 , STFI12N60M2 .

History: PE532DY | OSG60R1K8PF

Keywords - STF9HN65M2 MOSFET datasheet

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