STF9HN65M2 Datasheet and Replacement
Type Designator: STF9HN65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.6 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
Package: TO-220FP
STF9HN65M2 substitution
STF9HN65M2 Datasheet (PDF)
stf9hn65m2.pdf

STF9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching appli
Datasheet: STF7N60M2 , STF7N65M2 , STF7N80K5 , STF7NM50N , STF80N10F7 , STF8N80K5 , STF8NK85Z , STF8NM60N , IRFP250N , STF9N60M2 , STF9N65M2 , STF9NK80Z , STF9NM50N , STFI10N62K3 , STFI10N65K3 , STFI11N65M2 , STFI12N60M2 .
History: AP10N9R0I | 2SK3294 | 2SK1040 | SSF6N60G | VS40200AT | SSF60R360S2E | AP6680BGM-HF
Keywords - STF9HN65M2 MOSFET datasheet
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History: AP10N9R0I | 2SK3294 | 2SK1040 | SSF6N60G | VS40200AT | SSF60R360S2E | AP6680BGM-HF



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