All MOSFET. IXFR120N20 Datasheet

 

IXFR120N20 Datasheet and Replacement


   Type Designator: IXFR120N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 360 nC
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 2200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO247
 

 IXFR120N20 substitution

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IXFR120N20 Datasheet (PDF)

 ..1. Size:74K  ixys
 ixfr120n20.pdf pdf_icon

IXFR120N20

IXFR 120N20 VDSS = 200 VHiPerFETTM Power MOSFETsID25 = 105 AISOPLUS247TMRDS(on) = 17 m(Electrically Isolated Back Surface) trr 250 ns Single MOSFET DiePreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VGVGS Continuo

 8.1. Size:97K  ixys
 ixfr10n100f ixfr12n100f.pdf pdf_icon

IXFR120N20

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100F 1000 V 10 A 1.05 ISOPLUS247TMIXFR 10N100F 1000 V 9 A 1.20 F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol

 8.2. Size:33K  ixys
 ixfr10n100q ixfr12n100q.pdf pdf_icon

IXFR120N20

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 12N100Q 1000 V 10 A 1.05 WISOPLUS247TM Q CLASSIXFR 10N100Q 1000 V 9 A 1.20 W(Electrically Isolated Back Surface) trr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 1000 V

 9.1. Size:152K  ixys
 ixfr180n15p.pdf pdf_icon

IXFR120N20

IXFR 180N15P VDSS = 150 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 13 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 150 V E153432VDGR TJ

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Datasheet: IXFN48N50U3 , IXFN50N50 , IXFN55N50 , IXFN60N60 , IXFN73N30 , IXFN80N50 , IXFN90N30 , IXFR10N100Q , IRFP260N , IXFR12N100Q , IXFR15N80Q , IXFR180N07 , IXFR180N085 , IXFR180N10 , IXFR24N100 , IXFR24N50 , IXFR24N50Q .

Keywords - IXFR120N20 MOSFET datasheet

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