STFI13N60M2 Datasheet. Specs and Replacement

Type Designator: STFI13N60M2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: I2PAKFP

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STFI13N60M2 substitution

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STFI13N60M2 datasheet

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STFI13N60M2

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 650 V 0.38 11 A STFI13N60M2 3 2 Extremely low gate charge 1 1 2 3 TO-220FP Lower RDS(on) x area vs previous generation I2PAKFP Low gate input r... See More ⇒

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STFI13N60M2

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stfi13nm60n.pdf pdf_icon

STFI13N60M2

STFI13NM60N N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in I PAKFP package Datasheet production data Features VDSS RDS(on) Type ID PTOT (@Tjmax) max STFI13NM60N 650 V ... See More ⇒

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stfi13n80k5.pdf pdf_icon

STFI13N60M2

STFI13N80K5 N-channel 800 V, 0.37 typ.,12 A MDmesh K5 Power MOSFET in an I PAKFP package Datasheet - production data Features Order code VDS RDS(on) ID PTOT STFI13N80K5 800 V 0.45 12 A 35 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate Industry s lowest RDS(on) x area 1 2 3 Industry s best figure of ... See More ⇒

Detailed specifications: STF9N65M2, STF9NK80Z, STF9NM50N, STFI10N62K3, STFI10N65K3, STFI11N65M2, STFI12N60M2, STFI130N10F3, IRF9540N, STFI13N65M2, STFI13N80K5, STFI15N65M5, STFI15NM65N, STFI20N65M5, STFI20NM65N, STFI24N60M2, STFI24NM60N

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