STFI13N80K5 Datasheet and Replacement
Type Designator: STFI13N80K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: I2PAKFP
STFI13N80K5 substitution
STFI13N80K5 Datasheet (PDF)
stfi13n80k5.pdf

STFI13N80K5N-channel 800 V, 0.37 typ.,12 A MDmesh K5 Power MOSFET in an IPAKFP packageDatasheet - production dataFeatures Order code VDS RDS(on) ID PTOTSTFI13N80K5 800 V 0.45 12 A 35 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate Industrys lowest RDS(on) x area123 Industrys best figure of
stfi13nm60n.pdf

STFI13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in IPAKFP packageDatasheet production dataFeaturesVDSS RDS(on) Type ID PTOT(@Tjmax) maxSTFI13NM60N 650 V
stf13n60m2 stfi13n60m2.pdf

STF13N60M2, STFI13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF13N60M2650 V 0.38 11 ASTFI13N60M232 Extremely low gate charge1123TO-220FP Lower RDS(on) x area vs previous generationI2PAKFP Low gate input r
stf13n95k3 stfi13n95k3 stp13n95k3 stw13n95k3.pdf

STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3N-channel 950 V, 0.68 typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247Datasheet - production dataFeaturesOrder codes VDSS RDS(on)max ID PTOTSTF13N95K340 WSTFI13N95K3950 V
Datasheet: STF9NM50N , STFI10N62K3 , STFI10N65K3 , STFI11N65M2 , STFI12N60M2 , STFI130N10F3 , STFI13N60M2 , STFI13N65M2 , IRF4905 , STFI15N65M5 , STFI15NM65N , STFI20N65M5 , STFI20NM65N , STFI24N60M2 , STFI24NM60N , STFI260N6F6 , STFI26NM60N .
Keywords - STFI13N80K5 MOSFET datasheet
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