STFI6N80K5 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STFI6N80K5
   Marking Code: 6N80K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: I2PAKFP

STFI6N80K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STFI6N80K5 Datasheet (PDF)

..1. Size:816K st
stf6n80k5 stfi6n80k5.pdf

STF6N80K5, STFI6N80K5N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5Power MOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max ID PTOTSTF6N80K5800 V 1.6 4.5 A 25 WSTFI6N80K53211 Industrys lowest RDS(on)23TO-220FP2 Industrys best figure of merit (FoM)I PAKFP Ultra low gate charge 10

8.1. Size:1046K st
stfi6n62k3.pdf

STF6N62K3, STFI6N62K3, STI6N62K3,STP6N62K3, STU6N62K3N-channel 620 V, 0.95 typ., 5.5 A SuperMESH3 PowerMOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packagesDatasheet - production dataFeatures TABOrder codes VDSS RDS(on) max. ID PTOT33STF6N62K3 30 W2 211STFI6N62K3 30 WTO-220FPIPAKSTI6N62K3 620 V

8.2. Size:901K st
stf6n65k3 stfi6n65k3 stu6n65k3.pdf

STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V

8.3. Size:1046K st
stf6n62k3 stfi6n62k3 sti6n62k3 stp6n62k3 stu6n62k3.pdf