STFW1N105K3
MOSFET. Datasheet pdf. Equivalent
Type Designator: STFW1N105K3
Marking Code: 1N105K3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 1.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 15
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11
Ohm
Package:
TO-3PF
STFW1N105K3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STFW1N105K3
Datasheet (PDF)
..1. Size:668K st
stfw1n105k3 stp1n105k3.pdf 
STF1N105K3, STFW1N105K3, STP1N105K3N-channel 1050 V, 8 typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packagesDatasheet production dataFeaturesTABRDS(on)Order codes VDS ID PTOT 111max32 3STF1N105K31220 W1STFW1N105K3 1050 V 11 1.4 A TO-220FPTO-3PFSTP1N105K3 60 W Gate charge minimized Extremely large avalanche pe
9.1. Size:407K st
stf12n120k5 stfw12n120k5.pdf
STF12N120K5, STFW12N120K5N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeatures Order code VDS RDS(on) max. ID PTOTSTF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W111 Industrys lowest RDS(on) x area3321 2 Industrys best figure of merit (FoM) 1TO-220FP Ultra
9.2. Size:821K st
stb12n120k5 stfw12n120k5 stp12n120k5 stw12n120k5.pdf
STB12N120K5, STFW12N120K5STP12N120K5, STW12N120K5N-channel 1200 V, 0.58 , 12 A DPAK, TO-3PF, TO-220, TO-247Zener-protected SuperMESH 5 Power MOSFETPreliminary dataFeaturesTAB111RDS(on) Order codes VDSS ID PW2max.3312STB12N120K5 250 W1DPAKTO-3PFSTFW12N120K5 63 W1200 V
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