STFW2N105K5 Datasheet. Specs and Replacement

Type Designator: STFW2N105K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-3PF

STFW2N105K5 substitution

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STFW2N105K5 datasheet

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 stfw2n105k5.pdf pdf_icon

STFW2N105K5

STFW2N105K5 N-channel 1050 V, 6 typ., 1.5 A Zener-protected SuperMESH 5 Power MOSFET in a TO-3PF package Datasheet - preliminary data Features Order code VDS RDS(on) max ID PTOT STFW2N105K5 1050 V 8 1.5 A 30 W 1 1 1 Worldwide best FOM (figure of merit) Ultra low gate charge 3 100% avalanche tested 2 1 Zener-protected TO-3PF Applications Switching... See More ⇒

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 stf24n60m2 stfi24n60m2 stfw24n60m2.pdf pdf_icon

STFW2N105K5

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 3 2 1 1 STFI24N60M2 650 V 0.19 18 A 2 3 TO-220FP STFW24N60M2 I2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area... See More ⇒

Detailed specifications: STFI6N62K3, STFI6N65K3, STFI6N80K5, STFI7N80K5, STFI8N80K5, STFV4N150, STFW1N105K3, STFW24N60M2, AO4407, STFW38N65M5, STFW3N170, STFW40N60M2, STFW45N65M5, STFW69N65M5, STH110N10F7-2, STH110N10F7-6, STH12N120K5-2

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