All MOSFET. STFW2N105K5 Datasheet

 

STFW2N105K5 Datasheet and Replacement


   Type Designator: STFW2N105K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-3PF
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STFW2N105K5 Datasheet (PDF)

 ..1. Size:860K  st
 stfw2n105k5.pdf pdf_icon

STFW2N105K5

STFW2N105K5N-channel 1050 V, 6 typ., 1.5 A Zener-protected SuperMESH 5 Power MOSFET in a TO-3PF packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max ID PTOTSTFW2N105K5 1050 V 8 1.5 A 30 W111 Worldwide best FOM (figure of merit) Ultra low gate charge3 100% avalanche tested21 Zener-protectedTO-3PFApplications Switching

 9.1. Size:1364K  st
 stf24n60m2 stfi24n60m2 stfw24n60m2.pdf pdf_icon

STFW2N105K5

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - STFW2N105K5 MOSFET datasheet

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