All MOSFET. STFW2N105K5 Datasheet

 

STFW2N105K5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STFW2N105K5
   Marking Code: 2N105K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-3PF

 STFW2N105K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STFW2N105K5 Datasheet (PDF)

 ..1. Size:860K  st
 stfw2n105k5.pdf

STFW2N105K5 STFW2N105K5

STFW2N105K5N-channel 1050 V, 6 typ., 1.5 A Zener-protected SuperMESH 5 Power MOSFET in a TO-3PF packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max ID PTOTSTFW2N105K5 1050 V 8 1.5 A 30 W111 Worldwide best FOM (figure of merit) Ultra low gate charge3 100% avalanche tested21 Zener-protectedTO-3PFApplications Switching

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 stf24n60m2 stfi24n60m2 stfw24n60m2.pdf

STFW2N105K5 STFW2N105K5

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STFI9N60M2

 

 
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