STH110N10F7-2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STH110N10F7-2
Marking Code: 110N10F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 992 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: H2PAK-2
STH110N10F7-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH110N10F7-2 Datasheet (PDF)
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sth110n10f7-2 sth110n10f7-6.pdf
sth110n10f7-2 sth110n10f7-6.pdf
STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 m typ.,110 A, STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data TAB Features TABRDS(on) Order code VDS ID PTOT max. 72STH110N10F7-2 31 100 V 6.5 m 110 A 150 W 1STH110N10F7-6 H2PAK-6H2PAK-2Figure 1: Internal schematic diagram Among the lowest RDS(on) on the mar
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