STH110N10F7-2 Datasheet. Specs and Replacement

Type Designator: STH110N10F7-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 992 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: H2PAK-2

STH110N10F7-2 substitution

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STH110N10F7-2 datasheet

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STH110N10F7-2

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 m typ.,110 A, STripFET F7 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data TAB Features TAB RDS(on) Order code VDS ID PTOT max. 7 2 STH110N10F7-2 3 1 100 V 6.5 m 110 A 150 W 1 STH110N10F7-6 H2PAK-6 H2PAK-2 Figure 1 Internal schematic diagram Among the lowest RDS(on) on the mar... See More ⇒

Detailed specifications: STFW1N105K3, STFW24N60M2, STFW2N105K5, STFW38N65M5, STFW3N170, STFW40N60M2, STFW45N65M5, STFW69N65M5, 10N65, STH110N10F7-6, STH12N120K5-2, STH130N10F3-2, STH140N8F7-2, STH150N10F7-2, STH15NB50FI, STH160N4LF6-2, STH170N8F7-2

Keywords - STH110N10F7-2 MOSFET specs

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