STH150N10F7-2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STH150N10F7-2
Marking Code: 150N10F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 117 nC
trⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 1510 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: H2PAK-2
STH150N10F7-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
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STH15810-2N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on)max ID PTOTSTH15810-2 100 V 0.0039 110 A 250 WTAB 100% avalanche tested Ultra low on-resistance231 Applications2 Switching applicationsH PAK-2DescriptionThis N-channel Power MOSFETs utilize STr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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