STH15NB50FI Datasheet and Replacement
Type Designator: STH15NB50FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: ISOWATT218
STH15NB50FI substitution
STH15NB50FI Datasheet (PDF)
sth15nb50fi stw15nb50.pdf

STW15NB50STH15NB50FIN-CHANNEL 500V - 0.33 - 14.6A -T0-247/ISOWATT218 PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW15NB50 500 V
sth15na50.pdf

STH15NA50/FISTW15NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH15NA50 500 V
sth150n10f7-2.pdf

STH150N10F7-2N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTSTH150N10F7-2 100 V 0.0039 110 A 250 WTAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity31 High avalanche ruggedness2H
Datasheet: STFW45N65M5 , STFW69N65M5 , STH110N10F7-2 , STH110N10F7-6 , STH12N120K5-2 , STH130N10F3-2 , STH140N8F7-2 , STH150N10F7-2 , 2N60 , STH160N4LF6-2 , STH170N8F7-2 , STH175N4F6-2AG , STH175N4F6-6AG , STH180N10F3-6 , STH185N10F3-2 , STH185N10F3-6 , STH240N10F7-2 .
History: NCE3080KA
Keywords - STH15NB50FI MOSFET datasheet
STH15NB50FI cross reference
STH15NB50FI equivalent finder
STH15NB50FI lookup
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STH15NB50FI replacement
History: NCE3080KA



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