STH170N8F7-2 Datasheet. Specs and Replacement

Type Designator: STH170N8F7-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 1330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: H2PAK-2

STH170N8F7-2 substitution

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STH170N8F7-2 datasheet

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STH170N8F7-2

STH170N8F7-2 N-channel 80 V, 0.0028 typ., 120 A, STripFET F7 Power MOSFET in a H PAK-2 package Datasheet production data Features Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 120 A 250 W TAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 3 1 Low Crss/Ciss ratio for EMI immunity H2PAK-2 High avalanche ruggedn... See More ⇒

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 sth175n4f6-2ag sth175n4f6-6ag.pdf pdf_icon

STH170N8F7-2

STH175N4F6-2AG, STH175N4F6-6AG Automotive-grade N-channel 40 V, 1.9 m typ.,120 A STripFET F6 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data Features Order codes VDS RDS(on) max ID TAB TAB STH175N4F6-2AG 40 V 2.4 m 120 A STH175N4F6-6AG 7 2 3 Designed for automotive applications and 1 1 AEC-Q101 qualified H2PAK-2 Very low on-resi... See More ⇒

Detailed specifications: STH110N10F7-2, STH110N10F7-6, STH12N120K5-2, STH130N10F3-2, STH140N8F7-2, STH150N10F7-2, STH15NB50FI, STH160N4LF6-2, IRF2807, STH175N4F6-2AG, STH175N4F6-6AG, STH180N10F3-6, STH185N10F3-2, STH185N10F3-6, STH240N10F7-2, STH240N10F7-6, STH240N75F3-2

Keywords - STH170N8F7-2 MOSFET specs

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