STH170N8F7-2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STH170N8F7-2
Marking Code: 170N8F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 1330 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: H2PAK-2
STH170N8F7-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH170N8F7-2 Datasheet (PDF)
sth170n8f7-2.pdf
STH170N8F7-2N-channel 80 V, 0.0028 typ., 120 A, STripFET F7 Power MOSFET in a HPAK-2 packageDatasheet production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTH170N8F7-2 80 V 0.0037 120 A 250 WTAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM)231 Low Crss/Ciss ratio for EMI immunityH2PAK-2 High avalanche ruggedn
sth175n4f6-2ag sth175n4f6-6ag.pdf
STH175N4F6-2AG, STH175N4F6-6AGAutomotive-grade N-channel 40 V, 1.9 m typ.,120 A STripFET F6 Power MOSFETs in HPAK-2 and HPAK-6 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max IDTAB TABSTH175N4F6-2AG40 V 2.4 m 120 ASTH175N4F6-6AG723 Designed for automotive applications and 11AEC-Q101 qualifiedH2PAK-2 Very low on-resi
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