All MOSFET. STH175N4F6-6AG Datasheet

 

STH175N4F6-6AG Datasheet and Replacement


   Type Designator: STH175N4F6-6AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: H2PAK-6
 

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STH175N4F6-6AG Datasheet (PDF)

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 sth175n4f6-2ag sth175n4f6-6ag.pdf pdf_icon

STH175N4F6-6AG

STH175N4F6-2AG, STH175N4F6-6AGAutomotive-grade N-channel 40 V, 1.9 m typ.,120 A STripFET F6 Power MOSFETs in HPAK-2 and HPAK-6 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max IDTAB TABSTH175N4F6-2AG40 V 2.4 m 120 ASTH175N4F6-6AG723 Designed for automotive applications and 11AEC-Q101 qualifiedH2PAK-2 Very low on-resi

 9.1. Size:817K  st
 sth170n8f7-2.pdf pdf_icon

STH175N4F6-6AG

STH170N8F7-2N-channel 80 V, 0.0028 typ., 120 A, STripFET F7 Power MOSFET in a HPAK-2 packageDatasheet production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTH170N8F7-2 80 V 0.0037 120 A 250 WTAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM)231 Low Crss/Ciss ratio for EMI immunityH2PAK-2 High avalanche ruggedn

Datasheet: STH12N120K5-2 , STH130N10F3-2 , STH140N8F7-2 , STH150N10F7-2 , STH15NB50FI , STH160N4LF6-2 , STH170N8F7-2 , STH175N4F6-2AG , AON6380 , STH180N10F3-6 , STH185N10F3-2 , STH185N10F3-6 , STH240N10F7-2 , STH240N10F7-6 , STH240N75F3-2 , STH240N75F3-6 , STH245N75F3-6 .

History: SMM2348ES | RCD060N25 | WMS175N10LG4

Keywords - STH175N4F6-6AG MOSFET datasheet

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