STH240N10F7-6
MOSFET. Datasheet pdf. Equivalent
Type Designator: STH240N10F7-6
Marking Code: 240N10F7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 180
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 160
nC
trⓘ - Rise Time: 139
nS
Cossⓘ -
Output Capacitance: 2950
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025
Ohm
Package: H2PAK-6
STH240N10F7-6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH240N10F7-6
Datasheet (PDF)
..1. Size:768K st
sth240n10f7-2 sth240n10f7-6.pdf
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sth245n75f3-6.pdf
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