STH265N6F6-2AG Datasheet. Specs and Replacement

Type Designator: STH265N6F6-2AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 165 nS

Cossⓘ - Output Capacitance: 1235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: H2PAK-2

STH265N6F6-2AG substitution

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STH265N6F6-2AG datasheet

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STH265N6F6-2AG

STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 m typ., 180 A STripFET F6 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB TAB STH265N6F6-2AG 60 V 2.1 m 180 A STH265N6F6-6AG 60 V 2.1 m 180 A 7 2 3 1 Designed for automotive applications 1 Very low on-resistance ... See More ⇒

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STH265N6F6-2AG

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STH265N6F6-2AG

STH260N6F6-2 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in H PAK-2 package Datasheet production data Features Order code VDSS RDS(on) max ID TAB STH260N6F6-2 60 V ... See More ⇒

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STH265N6F6-2AG

STH260N6F6-6 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in H PAK-6 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STH260N6F6-6 60 V 2.4 m 180 A TAB Low gate charge Very low on-resistance 7 High avalanche ruggedness 1 1 Applications H2PAK-6 Switching applications Description Figure 1. Internal sch... See More ⇒

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Detailed specifications: STH185N10F3-2, STH185N10F3-6, STH240N10F7-2, STH240N10F7-6, STH240N75F3-2, STH240N75F3-6, STH245N75F3-6, STH260N6F6-6, IRFZ48N, STH265N6F6-6AG, STH270N4F3-2, STH270N8F7-2, STH270N8F7-6, STH275N8F7-2AG, STH275N8F7-6AG, STH310N10F7-2, STH310N10F7-6

Keywords - STH265N6F6-2AG MOSFET specs

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