STH265N6F6-2AG Datasheet and Replacement
Type Designator: STH265N6F6-2AG
Marking Code: 265N6F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 183 nC
trⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 1235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: H2PAK-2
STH265N6F6-2AG Datasheet (PDF)
sth265n6f6-2ag sth265n6f6-6ag.pdf

STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 m typ., 180 A STripFET F6 Power MOSFET in HPAK-2 and HPAK-6 packages Datasheet - production data Features Order code V R max I DS DS(on) DTABTABSTH265N6F6-2AG 60 V 2.1 m 180 A STH265N6F6-6AG 60 V 2.1 m 180 A 7231 Designed for automotive applications 1 Very low on-resistance
sth260n6f6-2.pdf

STH260N6F6-2N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDTABSTH260N6F6-2 60 V
sth260n6f6-6.pdf

STH260N6F6-6N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-6 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTH260N6F6-6 60 V 2.4 m 180 ATAB Low gate charge Very low on-resistance7 High avalanche ruggedness11ApplicationsH2PAK-6 Switching applicationsDescriptionFigure 1. Internal sch
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CS120NF10 | STN3N45K3 | WSC15N10 | CSD08N6P5 | IPP65R280C6 | AUIRF3205Z | HN1L02FU
Keywords - STH265N6F6-2AG MOSFET datasheet
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STH265N6F6-2AG replacement
History: CS120NF10 | STN3N45K3 | WSC15N10 | CSD08N6P5 | IPP65R280C6 | AUIRF3205Z | HN1L02FU



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