STH275N8F7-2AG MOSFET. Datasheet pdf. Equivalent
Type Designator: STH275N8F7-2AG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 315 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 2050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: H2PAK-2
STH275N8F7-2AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STH275N8F7-2AG Datasheet (PDF)
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