STH360N4F6-2 Datasheet. Specs and Replacement

Type Designator: STH360N4F6-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm

Package: H2PAK-2

STH360N4F6-2 substitution

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STH360N4F6-2 datasheet

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STH360N4F6-2

STH360N4F6-2 N-channel 40 V, 180 A STripFET VI DeepGATE Power MOSFET in H PAK-2 package Datasheet - preliminary data Features Order code VDSS RDS(on) max ID TAB STH360N4F6-2 40 V ... See More ⇒

Detailed specifications: STH275N8F7-2AG, STH275N8F7-6AG, STH310N10F7-2, STH310N10F7-6, STH315N10F7-2, STH315N10F7-6, STH320N4F6-2, STH320N4F6-6, 60N06, STH3N150-2, STH400N4F6-2, STH400N4F6-6, STH7NA90FI, STH80N10F7-2, STH8NA80FI, IRHG567110, IRHG57110

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.