STH360N4F6-2 Datasheet and Replacement

   Type Designator: STH360N4F6-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 1560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
   Package: H2PAK-2
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