All MOSFET. STH360N4F6-2 Datasheet

 

STH360N4F6-2 Datasheet and Replacement


   Type Designator: STH360N4F6-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 1560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
   Package: H2PAK-2
 

 STH360N4F6-2 substitution

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STH360N4F6-2 Datasheet (PDF)

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STH360N4F6-2

STH360N4F6-2N-channel 40 V, 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 packageDatasheet - preliminary dataFeaturesOrder code VDSS RDS(on) max IDTABSTH360N4F6-2 40 V

Datasheet: STH275N8F7-2AG , STH275N8F7-6AG , STH310N10F7-2 , STH310N10F7-6 , STH315N10F7-2 , STH315N10F7-6 , STH320N4F6-2 , STH320N4F6-6 , IRFB7545 , STH3N150-2 , STH400N4F6-2 , STH400N4F6-6 , STH7NA90FI , STH80N10F7-2 , STH8NA80FI , IRHG567110 , IRHG57110 .

Keywords - STH360N4F6-2 MOSFET datasheet

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