All MOSFET. IRHLYS797034CM Datasheet

 

IRHLYS797034CM MOSFET. Datasheet pdf. Equivalent

Type Designator: IRHLYS797034CM

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 36 nC

Rise Time (tr): 265 nS

Drain-Source Capacitance (Cd): 580 pF

Maximum Drain-Source On-State Resistance (Rds): 0.074 Ohm

Package: TO-257AA

IRHLYS797034CM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRHLYS797034CM Datasheet (PDF)

1.1. irhlys797034cm.pdf Size:202K _update

IRHLYS797034CM
IRHLYS797034CM

PD-97292A 2N7625T3 RADIATION HARDENED IRHLYS797034CM LOGIC LEVEL POWER MOSFET 60V, P-CHANNEL TECHNOLOGY THRU-HOLE (Low-Ohmic TO-257AA) ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLYS797034CM 100K Rads (Si) 0.074Ω -20A* IRHLYS793034CM 300K Rads (Si) 0.074Ω -20A* Low-Ohmic TO-257AA International Rectifier’s R7TM Logic Level Power Features: MOSFETs provid

3.1. irhlys77034cm.pdf Size:190K _update

IRHLYS797034CM
IRHLYS797034CM

PRELIMINARY PD-97291 2N7607T3 RADIATION HARDENED IRHLYS77034CM 60V, N-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY THRU-HOLE (Low-Ohmic TO-257AA) ™ Product Summary Part Number Radiation Level RDS(on) ID IRHLYS77034CM 100K Rads (Si) 0.045Ω 20A* IRHLYS73034CM 300K Rads (Si) 0.045Ω 20A* Low-Ohmic TO-257AA International Rectifier’s R7TM Logic Level Power Features: MOSFETs

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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