IRHNJ9230 Datasheet and Replacement

PD-97821RADIATION HARDENED IRHNJ9230POWER MOSFET200V, P-CHANNELSURFACE MOUNT (SMD-0.5) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ9230 100K Rads (Si) 0.8 -6.5AIRHNJ93230 300K Rads (Si) 0.8 -6.5ASMD-0.5International Rectifiers RADHard HEXFET technologyFeatures:provides high performance power MOSFETs for spacen

PD - 94277RADIATION HARDENED IRHNJ9130POWER MOSFET100V, P-CHANNELSURFACE MOUNT (SMD-0.5) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ9130 100K Rads (Si) 0.29 -11AIRHNJ93130 300K Rads (Si) 0.29 -11ASMD-0.5International Rectifiers RADHard HEXFET technol-ogy provides high performance power MOSFETs forFeatures:spac

PD-97198A2N7598U3RADIATION HARDENED IRHNJ67C30POWER MOSFET 600V, N-CHANNELSURFACE-MOUNT (SMD-0.5)TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ67C30 100K Rads (Si) 2.9 3.4A IRHNJ63C30 300K Rads (Si) 2.9 3.4ASMD-0.5International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.These devices have improved i

PD - 93821IRHNJ7230200V, N-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY SURFACE MOUNT (SMD-0.5)Product Summary Part Number Radiation Level RDS(on) IDIRHNJ7230 100K Rads (Si) 0.40 9.4AIRHNJ3230 300K Rads (Si) 0.40 9.4AIRHNJ4230 600K Rads (Si) 0.40 9.4AIRHNJ8230 1000K Rads (Si) 0.53 9.4ASMD-0.5International Rectifiers

PD - 94294BRADIATION HARDENED IRHNJ57133SEPOWER MOSFET130V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ57133SE 100K Rads (Si) 0.08 20ASMD-0.5International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f

PD-93837DIRHNJ57234SERADIATION HARDENED JANSR2N7555U3POWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704TECHNOLOGY55 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ57234SE 100K Rads (Si) 0.4 10A JANSR2N7555U3SMD-0.5Features:International Rectifiers R5TM technology providesn Single Event Effect (SEE) H

PD - 93820IRHNJ7130100V, N-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETMOSFET TECHNOLOGY SURFACE MOUNT (SMD-0.5)Product Summary Part Number Radiation Level RDS(on) IDIRHNJ7130 100K Rads (Si) 0.18 14.4AIRHNJ3130 300K Rads (Si) 0.18 14.4AIRHNJ4130 600K Rads (Si) 0.18 14.4AIRHNJ8130 1000K Rads (Si) 0.18 14.4ASMD-0.5International Rectifier

PD - 93753RADIATION HARDENED IRHNJ57230POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 13A IRHNJ53230 300K Rads (Si) 0.20 13A IRHNJ54230 600K Rads (Si) 0.20 13A IRHNJ58230 1000K Rads (Si) 0.25 13ASMD-0.5International Rectifiers R5TM technology provi

PD - 93752ARADIATION HARDENED IRHNJ57034POWER MOSFET60V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57034 100K Rads (Si) 0.030 22A* IRHNJ53034 300K Rads (Si) 0.030 22A* IRHNJ54034 600K Rads (Si) 0.030 22A* IRHNJ58034 1000K Rads (Si) 0.038 22A*SMD-0.5International Rectifiers R5TM technolo

PD - 93754CRADIATION HARDENED IRHNJ57130POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57130 100K Rads (Si) 0.060 22A* IRHNJ53130 300K Rads (Si) 0.060 22A* IRHNJ54130 600K Rads (Si) 0.060 22A* IRHNJ58130 1000K Rads (Si) 0.075 22A*SMD-0.5International Rectifiers R5TM tec

PD - 94046CRADIATION HARDENED IRHNJ597230POWER MOSFET200V, P-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ597230 100K Rads (Si) 0.505 -8.0A IRHNJ593230 300K Rads (Si) 0.505 -8.0ASMD-0.5International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli- S

PD - 93829AIRHNJ7330SEJANSR2N7465U3400V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/676POWER MOSFETRAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-0.5)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ7330SE 100K Rads (Si) 1.2 5.3A JANSR2N7465U3SMD-0.5International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high per

PD - 93836ARADIATION HARDENED IRHNJ57230SEPOWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) IDIRHNJ57230SE 100K Rads (Si) 0.22 12ASMD-0.5International Rectifiers R5TM technology provideshigh performance power MOSFETs for space appli-Features:cations. These devices have been characterized f

PD - 93830AIRHNJ7430SEJANSR2N7466U3500V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/676POWER MOSFETRAD Hard HEXFET TECHNOLOGYSURFACE MOUNT (SMD-0.5)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ7430SE 100K Rads (Si) 1.65 4.5A JANSR2N7466U3SMD-0.5International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high pe

PD - 94047ARADIATION HARDENED IRHNJ597130POWER MOSFET100V, P-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ597130 100K Rads (Si) 0.205 -12.5A IRHNJ593130 300K Rads (Si) 0.205 -12.5ASMD-0.5International Rectifiers R5TM technology providesFeatures:high performance power MOSFETs for space appli-

PD-97804RADIATION HARDENED IRHNJ67434POWER MOSFET 550V, N-CHANNELSURFACE-MOUNT (SMD-0.5)TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ67434 100K Rads (Si) 2.9 3.4A IRHNJ63434 300K Rads (Si) 2.9 3.4ASMD-0.5International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.These devices have improved immunity to

PD - 93751ARADIATION HARDENED IRHNJ57Z30POWER MOSFET30V, N-CHANNELSURFACE MOUNT (SMD-0.5) TECHNOLOGY44#cProduct Summary Part Number Radiation Level RDS(on) ID IRHNJ57Z30 100K Rads (Si) 0.020 22A* IRHNJ53Z30 300K Rads (Si) 0.020 22A* IRHNJ54Z30 600K Rads (Si) 0.020 22A* IRHNJ58Z30 1000K Rads (Si) 0.025 22A*SMD-0.5International Rectifiers R5TM technolo