IRHNJ9230 datasheet, аналоги, основные параметры
Наименование производителя: IRHNJ9230
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 190 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: SMD-0.5
Аналог (замена) для IRHNJ9230
- подборⓘ MOSFET транзистора по параметрам
IRHNJ9230 даташит
..1. Size:181K international rectifier
irhnj9230.pdf 
PD-97821 RADIATION HARDENED IRHNJ9230 POWER MOSFET 200V, P-CHANNEL SURFACE MOUNT (SMD-0.5) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNJ9230 100K Rads (Si) 0.8 -6.5A IRHNJ93230 300K Rads (Si) 0.8 -6.5A SMD-0.5 International Rectifier s RADHard HEXFET technology Features provides high performance power MOSFETs for space n
8.1. Size:126K international rectifier
irhnj9130.pdf 
PD - 94277 RADIATION HARDENED IRHNJ9130 POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT (SMD-0.5) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNJ9130 100K Rads (Si) 0.29 -11A IRHNJ93130 300K Rads (Si) 0.29 -11A SMD-0.5 International Rectifier s RADHard HEXFET technol- ogy provides high performance power MOSFETs for Features spac
9.1. Size:197K international rectifier
irhnj67c30.pdf 
PD-97198A 2N7598U3 RADIATION HARDENED IRHNJ67C30 POWER MOSFET 600V, N-CHANNEL SURFACE-MOUNT (SMD-0.5) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNJ67C30 100K Rads (Si) 2.9 3.4A IRHNJ63C30 300K Rads (Si) 2.9 3.4A SMD-0.5 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. These devices have improved i
9.2. Size:120K international rectifier
irhnj7230.pdf 
PD - 93821 IRHNJ7230 200V, N-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level RDS(on) ID IRHNJ7230 100K Rads (Si) 0.40 9.4A IRHNJ3230 300K Rads (Si) 0.40 9.4A IRHNJ4230 600K Rads (Si) 0.40 9.4A IRHNJ8230 1000K Rads (Si) 0.53 9.4A SMD-0.5 International Rectifier s
9.3. Size:125K international rectifier
irhnj57133se.pdf 
PD - 94294B RADIATION HARDENED IRHNJ57133SE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57133SE 100K Rads (Si) 0.08 20A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f
9.4. Size:190K international rectifier
irhnj57234se.pdf 
PD-93837D IRHNJ57234SE RADIATION HARDENED JANSR2N7555U3 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-0.5) REF MIL-PRF-19500/704 TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ57234SE 100K Rads (Si) 0.4 10A JANSR2N7555U3 SMD-0.5 Features International Rectifier s R5TM technology provides n Single Event Effect (SEE) H
9.6. Size:119K international rectifier
irhnj57230.pdf 
PD - 93753 RADIATION HARDENED IRHNJ57230 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230 100K Rads (Si) 0.20 13A IRHNJ53230 300K Rads (Si) 0.20 13A IRHNJ54230 600K Rads (Si) 0.20 13A IRHNJ58230 1000K Rads (Si) 0.25 13A SMD-0.5 International Rectifier s R5TM technology provi
9.7. Size:113K international rectifier
irhnj57034.pdf 
PD - 93752A RADIATION HARDENED IRHNJ57034 POWER MOSFET 60V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57034 100K Rads (Si) 0.030 22A* IRHNJ53034 300K Rads (Si) 0.030 22A* IRHNJ54034 600K Rads (Si) 0.030 22A* IRHNJ58034 1000K Rads (Si) 0.038 22A* SMD-0.5 International Rectifier s R5TM technolo
9.8. Size:121K international rectifier
irhnj57130.pdf 
PD - 93754C RADIATION HARDENED IRHNJ57130 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57130 100K Rads (Si) 0.060 22A* IRHNJ53130 300K Rads (Si) 0.060 22A* IRHNJ54130 600K Rads (Si) 0.060 22A* IRHNJ58130 1000K Rads (Si) 0.075 22A* SMD-0.5 International Rectifier s R5TM tec
9.9. Size:119K international rectifier
irhnj597230.pdf 
PD - 94046C RADIATION HARDENED IRHNJ597230 POWER MOSFET 200V, P-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ597230 100K Rads (Si) 0.505 -8.0A IRHNJ593230 300K Rads (Si) 0.505 -8.0A SMD-0.5 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space appli- S
9.10. Size:125K international rectifier
irhnj7330se.pdf 
PD - 93829A IRHNJ7330SE JANSR2N7465U3 400V, N-CHANNEL RADIATION HARDENED REF MIL-PRF-19500/676 POWER MOSFET RAD Hard HEXFET TECHNOLOGY SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ7330SE 100K Rads (Si) 1.2 5.3A JANSR2N7465U3 SMD-0.5 International Rectifier s RADHardTM HEXFET MOSFET technology provides high per
9.11. Size:123K international rectifier
irhnj57230se.pdf 
PD - 93836A RADIATION HARDENED IRHNJ57230SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57230SE 100K Rads (Si) 0.22 12A SMD-0.5 International Rectifier s R5TM technology provides high performance power MOSFETs for space appli- Features cations. These devices have been characterized f
9.12. Size:125K international rectifier
irhnj7430se.pdf 
PD - 93830A IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL RADIATION HARDENED REF MIL-PRF-19500/676 POWER MOSFET RAD Hard HEXFET TECHNOLOGY SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ7430SE 100K Rads (Si) 1.65 4.5A JANSR2N7466U3 SMD-0.5 International Rectifier s RADHardTM HEXFET MOSFET technology provides high pe
9.13. Size:121K international rectifier
irhnj597130.pdf 
PD - 94047A RADIATION HARDENED IRHNJ597130 POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ597130 100K Rads (Si) 0.205 -12.5A IRHNJ593130 300K Rads (Si) 0.205 -12.5A SMD-0.5 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space appli-
9.14. Size:188K international rectifier
irhnj67434.pdf 
PD-97804 RADIATION HARDENED IRHNJ67434 POWER MOSFET 550V, N-CHANNEL SURFACE-MOUNT (SMD-0.5) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNJ67434 100K Rads (Si) 2.9 3.4A IRHNJ63434 300K Rads (Si) 2.9 3.4A SMD-0.5 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to
9.15. Size:109K international rectifier
irhnj57z30.pdf 
PD - 93751A RADIATION HARDENED IRHNJ57Z30 POWER MOSFET 30V, N-CHANNEL SURFACE MOUNT (SMD-0.5) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHNJ57Z30 100K Rads (Si) 0.020 22A* IRHNJ53Z30 300K Rads (Si) 0.020 22A* IRHNJ54Z30 600K Rads (Si) 0.020 22A* IRHNJ58Z30 1000K Rads (Si) 0.025 22A* SMD-0.5 International Rectifier s R5TM technolo
Другие IGBT... IRHNA7264SE, IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE, IRHNJ57234SE, IRHNJ67434, IRHNJ67C30, 5N65, IRHNM57214SE, IRHSLNA57064, IRHSLNA57Z60, IRHSNA57064, IRHSNA57Z60, IRF034, IRF044SMD, IRF054SMD
