IRF034 Datasheet. Specs and Replacement

Type Designator: IRF034

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO3

IRF034 substitution

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IRF034 datasheet

 ..1. Size:144K  international rectifier
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IRF034

PD - 90585 REPETITIVE AVALANCHE AND dv/dt RATED IRF034 HEXFET TRANSISTORS 60V, N-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF034 60V 0.050 25 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design a... See More ⇒

Detailed specifications: IRHNJ67434, IRHNJ67C30, IRHNJ9230, IRHNM57214SE, IRHSLNA57064, IRHSLNA57Z60, IRHSNA57064, IRHSNA57Z60, NCEP15T14, IRF044SMD, IRF054SMD, IRF100B201, IRF100B202, IRF100S201, IRF1010A, IRF1010ELPBF, IRF1010EPBF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.