IRF044SMD Datasheet. Specs and Replacement

Type Designator: IRF044SMD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SMD1

IRF044SMD substitution

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IRF044SMD datasheet

 ..1. Size:21K  semelab
 irf044smd.pdf pdf_icon

IRF044SMD

IRF044SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 60V ID(cont) 34A RDS(on) 0.040 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPL... See More ⇒

 8.1. Size:144K  international rectifier
 irf044.pdf pdf_icon

IRF044SMD

PD - 90584 REPETITIVE AVALANCHE AND dv/dt RATED IRF044 60V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF044 60V 0.028 44 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design ... See More ⇒

Detailed specifications: IRHNJ67C30, IRHNJ9230, IRHNM57214SE, IRHSLNA57064, IRHSLNA57Z60, IRHSNA57064, IRHSNA57Z60, IRF034, AON7506, IRF054SMD, IRF100B201, IRF100B202, IRF100S201, IRF1010A, IRF1010ELPBF, IRF1010EPBF, IRF1010ESPBF

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