All MOSFET. IRF100B201 Datasheet

 

IRF100B201 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF100B201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 441 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 192 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 170 nC
   trⓘ - Rise Time: 97 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220AB

 IRF100B201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF100B201 Datasheet (PDF)

 ..1. Size:614K  international rectifier
 irf100b201 irf100s201.pdf

IRF100B201 IRF100B201

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 ..2. Size:617K  infineon
 irf100b201 irf100s201.pdf

IRF100B201 IRF100B201

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 ..3. Size:245K  inchange semiconductor
 irf100b201.pdf

IRF100B201 IRF100B201

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF100B201 IIRF100B201FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

 5.1. Size:529K  international rectifier
 irf100b202.pdf

IRF100B201 IRF100B201

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 5.2. Size:529K  infineon
 irf100b202.pdf

IRF100B201 IRF100B201

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 5.3. Size:245K  inchange semiconductor
 irf100b202.pdf

IRF100B201 IRF100B201

isc N-Channel MOSFET Transistor IRF100B202IIRF100B202FEATURESStatic drain-source on-resistance:RDS(on) 8.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFR18N15D

 

 
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