IRF1010EZPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1010EZPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220AB
IRF1010EZPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1010EZPBF Datasheet (PDF)
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf
PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf
PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech
auirf1010ezstrl.pdf
PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)
auirf1010ez auirf1010ezs auirf1010ezl.pdf
AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q
irf1010ezs.pdf
Isc N-Channel MOSFET Transistor IRF1010EZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
irf1010ez.pdf
isc N-Channel MOSFET Transistor IRF1010EZIIRF1010EZFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: NCE3N170 | STS1NK60Z | 2SK3703
History: NCE3N170 | STS1NK60Z | 2SK3703
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