IRF1010ZPBF Datasheet. Specs and Replacement

Type Designator: IRF1010ZPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-220AB

IRF1010ZPBF substitution

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IRF1010ZPBF datasheet

 ..1. Size:399K  international rectifier
 irf1010zlpbf irf1010zpbf irf1010zspbf.pdf pdf_icon

IRF1010ZPBF

PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D l Fast Switching VDSS = 55V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 7.5m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extr... See More ⇒

 6.1. Size:180K  international rectifier
 irf1010z.pdf pdf_icon

IRF1010ZPBF

PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 7.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest... See More ⇒

 6.2. Size:268K  international rectifier
 auirf1010zstrl.pdf pdf_icon

IRF1010ZPBF

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 7.5m Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 94A Automotive Qualified * S... See More ⇒

 6.3. Size:752K  infineon
 auirf1010z auirf1010zs auirf1010zl.pdf pdf_icon

IRF1010ZPBF

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive ... See More ⇒

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Detailed specifications: IRF1010EZLPBF, IRF1010EZPBF, IRF1010EZSPBF, IRF1010H, IRF1010NLPBF, IRF1010NPBF, IRF1010NSPBF, IRF1010ZLPBF, IRF520, IRF1010ZSPBF, IRF1018EPBF, IRF1018ESLPBF, IRF1018ESPBF, IRF1104PBF, IRF120, IRF121, IRF122

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