Справочник MOSFET. IRF1010ZPBF

 

IRF1010ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF1010ZPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 140 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 75 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 63 nC
   Время нарастания (tr): 150 ns
   Выходная емкость (Cd): 420 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF1010ZPBF

 

 

IRF1010ZPBF Datasheet (PDF)

 ..1. Size:399K  international rectifier
 irf1010zlpbf irf1010zpbf irf1010zspbf.pdf

IRF1010ZPBF IRF1010ZPBF

PD - 95361AIRF1010ZPbFIRF1010ZSPbFIRF1010ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature Dl Fast Switching VDSS = 55Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 7.5mGDescriptionID = 75AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extr

 6.1. Size:180K  international rectifier
 irf1010z.pdf

IRF1010ZPBF IRF1010ZPBF

PD - 94652AUTOMOTIVE MOSFETIRF1010ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 7.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

 6.2. Size:268K  international rectifier
 auirf1010zstrl.pdf

IRF1010ZPBF IRF1010ZPBF

PD - 97458AAUIRF1010ZAUTOMOTIVE GRADEAUIRF1010ZSAUIRF1010ZLFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.7.5mTjmaxG Lead-Free, RoHS CompliantID (Silicon Limited)94A Automotive Qualified *S

 6.3. Size:752K  infineon
 auirf1010z auirf1010zs auirf1010zl.pdf

IRF1010ZPBF IRF1010ZPBF

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

 6.4. Size:252K  inchange semiconductor
 irf1010zs.pdf

IRF1010ZPBF IRF1010ZPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ZSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

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