All MOSFET. IRF1010ZSPBF Datasheet

 

IRF1010ZSPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF1010ZSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-263

 IRF1010ZSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1010ZSPBF Datasheet (PDF)

 ..1. Size:399K  international rectifier
irf1010zlpbf irf1010zpbf irf1010zspbf.pdf

IRF1010ZSPBF IRF1010ZSPBF

PD - 95361AIRF1010ZPbFIRF1010ZSPbFIRF1010ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature Dl Fast Switching VDSS = 55Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 7.5mGDescriptionID = 75AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extr

 5.1. Size:268K  international rectifier
auirf1010zstrl.pdf

IRF1010ZSPBF IRF1010ZSPBF

PD - 97458AAUIRF1010ZAUTOMOTIVE GRADEAUIRF1010ZSAUIRF1010ZLFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.7.5mTjmaxG Lead-Free, RoHS CompliantID (Silicon Limited)94A Automotive Qualified *S

 5.2. Size:752K  infineon
auirf1010z auirf1010zs auirf1010zl.pdf

IRF1010ZSPBF IRF1010ZSPBF

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

 5.3. Size:252K  inchange semiconductor
irf1010zs.pdf

IRF1010ZSPBF IRF1010ZSPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ZSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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