IRF1104PBF Datasheet. Specs and Replacement

Type Designator: IRF1104PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 114 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220AB

IRF1104PBF substitution

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IRF1104PBF datasheet

 ..1. Size:185K  international rectifier
 irf1104pbf.pdf pdf_icon

IRF1104PBF

PD - 94967 IRF1104PbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.009 l Fast Switching G l Fully Avalanche Rated ID = 100A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

 7.1. Size:101K  international rectifier
 irf1104.pdf pdf_icon

IRF1104PBF

PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.009 Fast Switching G Fully Avalanche Rated ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-... See More ⇒

 7.2. Size:208K  international rectifier
 irf1104l.pdf pdf_icon

IRF1104PBF

PD -91845 IRF1104S/L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009 175 C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique... See More ⇒

 7.3. Size:208K  international rectifier
 irf1104s.pdf pdf_icon

IRF1104PBF

PD -91845 IRF1104S/L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009 175 C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique... See More ⇒

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Detailed specifications: IRF1010NPBF, IRF1010NSPBF, IRF1010ZLPBF, IRF1010ZPBF, IRF1010ZSPBF, IRF1018EPBF, IRF1018ESLPBF, IRF1018ESPBF, 8N60, IRF120, IRF121, IRF122, IRF123, IRF1302S, IRF130SMD, IRF130SMD05, IRF130SMD05DSG

Keywords - IRF1104PBF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.