IRF1104PBF - Даташиты. Аналоги. Основные параметры

PD - 94967IRF1104PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.009l Fast SwitchingGl Fully Avalanche RatedID = 100Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extreme

PD- 9.1724AIRF1104PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 100A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

PD -91845IRF1104S/LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L)RDS(on) = 0.009 175C Operating TemperatureG Fast SwitchingID = 100A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing technique

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1104 IIRF1104FEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM