IRF122 Datasheet. Specs and Replacement

Type Designator: IRF122

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3

IRF122 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRF122 datasheet

 ..1. Size:170K  fairchild semi
 irf120 irf121 irf122 irf123 mtp10n08.pdf pdf_icon

IRF122

... See More ⇒

 9.1. Size:50K  international rectifier
 irf1205.pdf pdf_icon

IRF122

PD - 93803 PROVISIONAL IRF1205 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temprature Fast Switching RDS(on) = 0.027 Fully Avalanche Rated G ID = 41A S Description Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area... See More ⇒

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

IRF122

SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior... See More ⇒

Detailed specifications: IRF1010ZPBF, IRF1010ZSPBF, IRF1018EPBF, IRF1018ESLPBF, IRF1018ESPBF, IRF1104PBF, IRF120, IRF121, AO3400A, IRF123, IRF1302S, IRF130SMD, IRF130SMD05, IRF130SMD05DSG, IRF131, IRF1310NPBF, IRF1310NSPBF

Keywords - IRF122 MOSFET specs

 IRF122 cross reference

 IRF122 equivalent finder

 IRF122 pdf lookup

 IRF122 substitution

 IRF122 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility