All MOSFET. IXFR58N20Q Datasheet

 

IXFR58N20Q Datasheet and Replacement


   Type Designator: IXFR58N20Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 98 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247
 

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IXFR58N20Q Datasheet (PDF)

 ..1. Size:89K  ixys
 ixfr58n20q.pdf pdf_icon

IXFR58N20Q

IXFR 58N20Q V = 200 VHiPerFETTM Power MOSFETsDSSID25 = 50 AISOPLUS247TM Q-ClassRDS(on) = 40 m(Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary Data SheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C

 9.1. Size:75K  ixys
 ixfr50n50 ixfr55n50.pdf pdf_icon

IXFR58N20Q

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 50N50 500 V 43 A 100 mISOPLUS247TMIXFR 55N50 500 V 48 A 90 m(Electrically Isolated Back Surface) trr 250 ns Single Die MOSFETSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ITF87072DK8T | IRFE110 | IXFN110N20

Keywords - IXFR58N20Q MOSFET datasheet

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