IXFR58N20Q PDF and Equivalents Search

 

IXFR58N20Q Specs and Replacement

Type Designator: IXFR58N20Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 870 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO247

IXFR58N20Q substitution

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IXFR58N20Q datasheet

 ..1. Size:89K  ixys
 ixfr58n20q.pdf pdf_icon

IXFR58N20Q

IXFR 58N20Q V = 200 V HiPerFETTM Power MOSFETs DSS ID25 = 50 A ISOPLUS247TM Q-Class RDS(on) = 40 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C... See More ⇒

 9.1. Size:75K  ixys
 ixfr50n50 ixfr55n50.pdf pdf_icon

IXFR58N20Q

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 50N50 500 V 43 A 100 m ISOPLUS247TM IXFR 55N50 500 V 48 A 90 m (Electrically Isolated Back Surface) trr 250 ns Single Die MOSFET Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS... See More ⇒

Detailed specifications: IXFR24N50 , IXFR24N50Q , IXFR26N50 , IXFR26N50Q , IXFR30N50Q , IXFR32N50Q , IXFR50N50 , IXFR55N50 , IRF9540 , IXFR80N20Q , IXFT10N100 , IXFT12N100 , IXFT12N100Q , IXFT13N80Q , IXFT14N100 , IXFT15N100 , IXFT15N80Q .

Keywords - IXFR58N20Q MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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