All MOSFET. 2SJ530 Datasheet

 

2SJ530 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ530

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 850 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: DPAK

2SJ530 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ530 Datasheet (PDF)

1.1. rej03g0880 2sj530lsds.pdf Size:108K _renesas

2SJ530
2SJ530

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sj530.pdf Size:95K _renesas

2SJ530
2SJ530

2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 ? typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package nam

 5.1. 2sj537.pdf Size:136K _toshiba

2SJ530
2SJ530

2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSVI) 2SJ537 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.16 ? (typ.) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : I = -100 µA (V = -50 V) DSS DS Enhancement-mode : Vth = -0.8~-2.0 V

5.2. 2sj535.pdf Size:89K _renesas

2SJ530
2SJ530

2SJ535 Silicon P Channel MOS FET REJ03G0885-0400 (Previous: ADE-208-627B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2

 5.3. 2sj534.pdf Size:88K _renesas

2SJ530
2SJ530

2SJ534 Silicon P Channel MOS FET REJ03G0884-0500 (Previous: ADE-208-589C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2

5.4. rej03g0886 2sj539ds.pdf Size:101K _renesas

2SJ530
2SJ530

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.5. 2sj531.pdf Size:88K _renesas

2SJ530
2SJ530

2SJ531 Silicon P Channel MOS FET REJ03G0881-0300 (Previous: ADE-208-646A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1

5.6. 2sj532.pdf Size:88K _renesas

2SJ530
2SJ530

2SJ532 Silicon P Channel MOS FET REJ03G0882-0400 (Previous: ADE-208-653B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1

5.7. rej03g0884 2sj534ds.pdf Size:102K _renesas

2SJ530
2SJ530

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. 2sj539.pdf Size:88K _renesas

2SJ530
2SJ530

2SJ539 Silicon P Channel MOS FET REJ03G0886-0300 (Previous: ADE-208-657A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source

5.9. 2sj533.pdf Size:88K _renesas

2SJ530
2SJ530

2SJ533 Silicon P Channel MOS FET REJ03G0883-0400 (Previous: ADE-208-649B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1

5.10. rej03g0885 2sj535ds.pdf Size:102K _renesas

2SJ530
2SJ530

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: 2SJ505 , 2SJ506 , 2SJ517 , 2SJ518 , 2SJ526 , 2SJ527 , 2SJ528 , 2SJ529 , 2SK163 , 2SJ531 , 2SJ532 , 2SJ533 , 2SJ534 , 2SJ535 , 2SJ539 , 2SJ540 , 2SJ541 .

 
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