All MOSFET. STH9NA60FI Datasheet

 

STH9NA60FI Datasheet and Replacement


   Type Designator: STH9NA60FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: ISOWATT218
 

 STH9NA60FI substitution

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STH9NA60FI Datasheet (PDF)

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STH9NA60FI

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

 8.1. Size:133K  st
 sth9na80fi.pdf pdf_icon

STH9NA60FI

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 8.2. Size:147K  njs
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STH9NA60FI

 9.1. Size:338K  1
 sth9n80 sth9n80fi.pdf pdf_icon

STH9NA60FI

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Datasheet: IRF1404SPBF , IRF1404ZGPBF , IRF1404ZLPBF , IRF1404ZPBF , IRF1404ZSPBF , IRF1405LPBF , IRF1405PBF , IRF1405SPBF , IRF540 , STH9NA80FI , STI10NM60N , STI11NM60ND , STI11NM80 , STI120NH03L , STI12NM50N , STI14NM65N , STI150N10F7 .

History: GKI07113

Keywords - STH9NA60FI MOSFET datasheet

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