STH9NA60FI Specs and Replacement
Type Designator: STH9NA60FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: ISOWATT218
STH9NA60FI substitution
- MOSFET ⓘ Cross-Reference Search
STH9NA60FI datasheet
sth9na60fi.pdf
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA60 600 V ... See More ⇒
sth9na80fi.pdf
STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒
Detailed specifications: IRF1404SPBF , IRF1404ZGPBF , IRF1404ZLPBF , IRF1404ZPBF , IRF1404ZSPBF , IRF1405LPBF , IRF1405PBF , IRF1405SPBF , IRF540N , STH9NA80FI , STI10NM60N , STI11NM60ND , STI11NM80 , STI120NH03L , STI12NM50N , STI14NM65N , STI150N10F7 .
Keywords - STH9NA60FI MOSFET specs
STH9NA60FI cross reference
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STH9NA60FI replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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