All MOSFET. STH9NA80FI Datasheet

 

STH9NA80FI Datasheet and Replacement


   Type Designator: STH9NA80FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: ISOWATT218
 

 STH9NA80FI substitution

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STH9NA80FI Datasheet (PDF)

 ..1. Size:133K  st
 sth9na80fi.pdf pdf_icon

STH9NA80FI

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 ..2. Size:147K  njs
 sth9na80fi stw9na80.pdf pdf_icon

STH9NA80FI

 8.1. Size:130K  st
 sth9na60fi.pdf pdf_icon

STH9NA80FI

STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V

 9.1. Size:338K  1
 sth9n80 sth9n80fi.pdf pdf_icon

STH9NA80FI

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Datasheet: IRF1404ZGPBF , IRF1404ZLPBF , IRF1404ZPBF , IRF1404ZSPBF , IRF1405LPBF , IRF1405PBF , IRF1405SPBF , STH9NA60FI , IRF540N , STI10NM60N , STI11NM60ND , STI11NM80 , STI120NH03L , STI12NM50N , STI14NM65N , STI150N10F7 , STI15NM60N .

History: SEFN9140

Keywords - STH9NA80FI MOSFET datasheet

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