STH9NA80FI Datasheet. Specs and Replacement

Type Designator: STH9NA80FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: ISOWATT218

STH9NA80FI substitution

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STH9NA80FI datasheet

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STH9NA80FI

STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒

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STH9NA80FI

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STH9NA80FI

STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA60 600 V ... See More ⇒

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STH9NA80FI

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Detailed specifications: IRF1404ZGPBF, IRF1404ZLPBF, IRF1404ZPBF, IRF1404ZSPBF, IRF1405LPBF, IRF1405PBF, IRF1405SPBF, STH9NA60FI, IRF540, STI10NM60N, STI11NM60ND, STI11NM80, STI120NH03L, STI12NM50N, STI14NM65N, STI150N10F7, STI15NM60N

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