STH9NA80FI Datasheet and Replacement
Type Designator: STH9NA80FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: ISOWATT218
STH9NA80FI substitution
STH9NA80FI Datasheet (PDF)
sth9na80fi.pdf
STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V
sth9na60fi.pdf
STW9NA60STH9NA60FI N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA60 600 V
Datasheet: IRF1404ZGPBF , IRF1404ZLPBF , IRF1404ZPBF , IRF1404ZSPBF , IRF1405LPBF , IRF1405PBF , IRF1405SPBF , STH9NA60FI , IRF540 , STI10NM60N , STI11NM60ND , STI11NM80 , STI120NH03L , STI12NM50N , STI14NM65N , STI150N10F7 , STI15NM60N .
History: RFF70N06 | SSS1004 | RFG40N10 | IRF1312PBF | 5N60L-TF2-T | NCE6602N | SRT10N070HD
Keywords - STH9NA80FI MOSFET datasheet
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STH9NA80FI replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: RFF70N06 | SSS1004 | RFG40N10 | IRF1312PBF | 5N60L-TF2-T | NCE6602N | SRT10N070HD
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