STI11NM80 MOSFET. Datasheet pdf. Equivalent
Type Designator: STI11NM80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: I2PAK
STI11NM80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STI11NM80 Datasheet (PDF)
stb11nm80t4 sti11nm80.pdf
STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V
stb11nm80 stf11nm80 sti11nm80 stp11nm80 stw11nm80.pdf
STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V
sti11nm60nd.pdf
STD11NM60ND, STF/I11NM60NDSTP11NM60ND, STU11NM60NDN-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFETI2PAK, TO-220, TO-220FP, IPAK, DPAKFeatures Order codes VDSS (@Tjmax) RDS(on) max ID33STD11NM60ND 10 A 1 21STF11NM60ND 10 A(1)DPAKIPAKSTI11NM60ND 650 V
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf
STD11NM60ND, STF/I11NM60NDSTP11NM60ND, STU11NM60NDN-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFETI2PAK, TO-220, TO-220FP, IPAK, DPAKFeatures Order codes VDSS (@Tjmax) RDS(on) max ID33STD11NM60ND 10 A 1 21STF11NM60ND 10 A(1)DPAKIPAKSTI11NM60ND 650 V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
