All MOSFET. STI360N4F6 Datasheet

 

STI360N4F6 Datasheet and Replacement


   Type Designator: STI360N4F6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 1560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: I2PAK
 

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STI360N4F6 Datasheet (PDF)

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STI360N4F6

STI360N4F6, STP360N4F6N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packagesDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max IDTABTABSTI360N4F640 V

Datasheet: STI19NM65N , STI20N65M5 , STI21NM60ND , STI23NM60N , STI24N60M2 , STI260N6F6 , STI33N60M2 , STI33N65M2 , AO3400 , STI400N4F6 , STI40N65M2 , STI45N10F7 , STI57N65M5 , STI5N52U , STI60N55F3 , STI6N80K5 , STI76NF75 .

History: RJK6034DPD-E0 | TA17632 | ZVP0545GTA | 2SJ465 | 2SK2601 | IRF8113 | L2N7002M3T5G

Keywords - STI360N4F6 MOSFET datasheet

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