STI360N4F6 Datasheet. Specs and Replacement

Type Designator: STI360N4F6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: I2PAK

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STI360N4F6 datasheet

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STI360N4F6

STI360N4F6, STP360N4F6 N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in I PAK and TO-220 packages Datasheet - preliminary data Features RDS(on) Order codes VDSS max ID TAB TAB STI360N4F6 40 V ... See More ⇒

Detailed specifications: STI19NM65N, STI20N65M5, STI21NM60ND, STI23NM60N, STI24N60M2, STI260N6F6, STI33N60M2, STI33N65M2, IRF4905, STI400N4F6, STI40N65M2, STI45N10F7, STI57N65M5, STI5N52U, STI60N55F3, STI6N80K5, STI76NF75

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.