STI360N4F6 Datasheet and Replacement
Type Designator: STI360N4F6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 1560 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: I2PAK
STI360N4F6 substitution
STI360N4F6 Datasheet (PDF)
sti360n4f6 stp360n4f6.pdf

STI360N4F6, STP360N4F6N-channel 40 V, 120 A STripFET VI DeepGATE Power MOSFET in IPAK and TO-220 packagesDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max IDTABTABSTI360N4F640 V
Datasheet: STI19NM65N , STI20N65M5 , STI21NM60ND , STI23NM60N , STI24N60M2 , STI260N6F6 , STI33N60M2 , STI33N65M2 , K3569 , STI400N4F6 , STI40N65M2 , STI45N10F7 , STI57N65M5 , STI5N52U , STI60N55F3 , STI6N80K5 , STI76NF75 .
History: NCEP072N10A | SIZ704DT
Keywords - STI360N4F6 MOSFET datasheet
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History: NCEP072N10A | SIZ704DT



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