STK22N6F3 Datasheet and Replacement
Type Designator: STK22N6F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 536 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: POLARPAK
STK22N6F3 substitution
STK22N6F3 Datasheet (PDF)
stk22n6f3.pdf
STK22N6F3N-channel 60 V, 0.0055 , 22 A, PolarPAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) maxSTK22N6F3 60 V
stk22n05.pdf
STK22N05N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK22N05 50 V
stk22n06.pdf
STK22N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK22N06 60 V
Datasheet: STI45N10F7 , STI57N65M5 , STI5N52U , STI60N55F3 , STI6N80K5 , STI76NF75 , STI90N4F3 , STK20N75F3 , 2SK3568 , STK28N3LLH5 , STK38N3LLH5 , STK800 , STK820 , STK822 , STK850 , STL100N10F7 , STL100NH3LL .
History: RF4E080GN | SRT15N059HS2 | NTTFS002N04CL | WMS140NV6LG4 | STI100N10F7 | IRFB4137 | SRT08N025HD
Keywords - STK22N6F3 MOSFET datasheet
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History: RF4E080GN | SRT15N059HS2 | NTTFS002N04CL | WMS140NV6LG4 | STI100N10F7 | IRFB4137 | SRT08N025HD
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