All MOSFET. STK800 Datasheet

 

STK800 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STK800
   Marking Code: K800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.4 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: POLARPAK

 STK800 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STK800 Datasheet (PDF)

 ..1. Size:519K  st
 stk800.pdf

STK800 STK800

STK800N-channel 30V - 0.006 - 20A - PolarPAKSTripFET Power MOSFETFeaturesVDSS RDS(on) RDS(on)*Qg PTOTTypeSTK800 30V

 9.1. Size:109K  samhop
 stk801.pdf

STK800 STK800

GreenProductSTK801aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.1.2 @ VGS=10VSuface Mount Package.80V 0.6A1.5 @ VGS=4.5V ESD Protected.D DG SDSOT-89GS ABSOLUTE MAXIMUM RATINGS (TA=25C unless

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History: FQP18N50V2

 

 
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