STK800 Datasheet. Specs and Replacement

Type Designator: STK800

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: POLARPAK

STK800 substitution

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STK800 datasheet

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STK800

STK800 N-channel 30V - 0.006 - 20A - PolarPAK STripFET Power MOSFET Features VDSS RDS(on) RDS(on)*Qg PTOT Type STK800 30V ... See More ⇒

 9.1. Size:109K  samhop
 stk801.pdf pdf_icon

STK800

Green Product STK801 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 1.2 @ VGS=10V Suface Mount Package. 80V 0.6A 1.5 @ VGS=4.5V ESD Protected. D D G S D SOT-89 G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless... See More ⇒

Detailed specifications: STI60N55F3, STI6N80K5, STI76NF75, STI90N4F3, STK20N75F3, STK22N6F3, STK28N3LLH5, STK38N3LLH5, K4145, STK820, STK822, STK850, STL100N10F7, STL100NH3LL, STL105NS3LLH7, STL10N60M2, STL110N10F7

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