STK800 Datasheet and Replacement
Type Designator: STK800
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: POLARPAK
STK800 substitution
STK800 Datasheet (PDF)
stk800.pdf

STK800N-channel 30V - 0.006 - 20A - PolarPAKSTripFET Power MOSFETFeaturesVDSS RDS(on) RDS(on)*Qg PTOTTypeSTK800 30V
stk801.pdf

GreenProductSTK801aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.1.2 @ VGS=10VSuface Mount Package.80V 0.6A1.5 @ VGS=4.5V ESD Protected.D DG SDSOT-89GS ABSOLUTE MAXIMUM RATINGS (TA=25C unless
Datasheet: STI60N55F3 , STI6N80K5 , STI76NF75 , STI90N4F3 , STK20N75F3 , STK22N6F3 , STK28N3LLH5 , STK38N3LLH5 , IRFB3607 , STK820 , STK822 , STK850 , STL100N10F7 , STL100NH3LL , STL105NS3LLH7 , STL10N60M2 , STL110N10F7 .
History: FQI3N30TU | IPD30N03S4L-09 | LNF4N65 | 2SK895 | 2SK526 | SRT10N120LM | 2SJ169
Keywords - STK800 MOSFET datasheet
STK800 cross reference
STK800 equivalent finder
STK800 lookup
STK800 substitution
STK800 replacement
History: FQI3N30TU | IPD30N03S4L-09 | LNF4N65 | 2SK895 | 2SK526 | SRT10N120LM | 2SJ169



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