STL120N4F6AG Datasheet. Specs and Replacement

Type Designator: STL120N4F6AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 625 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: POWERFLAT5X6

STL120N4F6AG substitution

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STL120N4F6AG datasheet

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STL120N4F6AG

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STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 2 3 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV Ap... See More ⇒

Detailed specifications: STL100NH3LL, STL105NS3LLH7, STL10N60M2, STL110N10F7, STL110NS3LLH7, STL11N4LLF5, STL11N65M5, STL120N2VH5, IRFP450, STL12N3LLH5, STL12N60M2, STL12N65M2, STL12P6F6, STL130N8F7, STL13DP10F6, STL13N60M2, STL13N65M2

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