STL130N8F7
MOSFET. Datasheet pdf. Equivalent
Type Designator: STL130N8F7
Marking Code: 130N8F7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 4.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 26
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 96
nC
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 1195
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036
Ohm
Package: POWERFLAT5X6
STL130N8F7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL130N8F7
Datasheet (PDF)
..1. Size:1198K st
stl130n8f7.pdf 
STL130N8F7N-channel 80 V, 3 m, 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOT3.6 m STL130N8F7 80 V 130 A 135 W(VGS=10 V) Ultra low on-resistance123 100% avalanche tested4ApplicationsPowerFLAT 5x6 Switching applicationsDescriptionFigure 1. Internal schemati
7.1. Size:667K st
stl130n6f7.pdf
STL130N6F7 N-channel 60 V, 0.003 typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) DSTL130N6F7 60 V 0.0035 130 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications
9.1. Size:636K st
stl13n65m2.pdf
STL13N65M2N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 123 100% avalanche tested4 Zener-protectedPowerFLAT 5x6 HVApplications S
9.2. Size:1047K st
stl13n60m2.pdf
STL13N60M2N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x6
9.3. Size:575K st
stl13dp10f6.pdf
STL13DP10F6Dual P-channel 100 V, 0.136 typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double islandDatasheet - production dataFeatures VDS RDS(on) max. ID1 Order code4 STL13DP10F6 100 V 0.18 3.3 A 1 RDS(on) * Qg industry benchmark84 Extremely low on-resistance RDS(on)5 High avalanche ruggednessPowerFLAT 5x6 Low gat
9.4. Size:877K st
stl13nm60n.pdf
STL13NM60NN-channel 600 V, 0.320 typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS @ Tjmax RDS(on) max. IDS ) Bottom viewS(3)S(3) STL13NM60N 650 V 0.385 10 A G(1)D(2) 100% avalanche tested Low input capacitance and gate charge Low gate input resistancePowerFLAT 8x8 HVApplicatio
9.5. Size:619K st
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