All MOSFET. STL17N65M5 Datasheet

 

STL17N65M5 Datasheet and Replacement


   Type Designator: STL17N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.374 Ohm
   Package: POWERFLAT8X8HV
 

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STL17N65M5 Datasheet (PDF)

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 stl17n65m5.pdf pdf_icon

STL17N65M5

STL17N65M5N-channel 650 V, 0.338 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL17N65M5 710 V 0.374 10 A(1)G(1)1. The value is rated according to Rthj-case and limited by D(3)package Worldwide best RDS(on) * area Higher VDSS rating an

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 stl17n3llh6.pdf pdf_icon

STL17N65M5

STL17N3LLH6N-channel 30 V, 0.0038 , 17 A PowerFLAT(3.3x3.3)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL17N3LLH6 30 V 0.0045 17 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power los

Datasheet: STL130N8F7 , STL13DP10F6 , STL13N60M2 , STL13N65M2 , STL15N65M5 , STL160NS3LLH7 , STL16N60M2 , STL16N65M2 , 75N75 , STL180N4LLF6 , STL18N60M2 , STL18N65M2 , STL18N65M5 , STL19N65M5 , STL20DN10F7 , STL20NM20N , STL220N3LLH7 .

History: TMPF8N60AZ

Keywords - STL17N65M5 MOSFET datasheet

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