STL17N65M5 Datasheet. Specs and Replacement

Type Designator: STL17N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.374 Ohm

Package: POWERFLAT8X8HV

STL17N65M5 substitution

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STL17N65M5 datasheet

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 stl17n65m5.pdf pdf_icon

STL17N65M5

STL17N65M5 N-channel 650 V, 0.338 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - preliminary data Features Order code VDS @ TJmax RDS(on) max ID S(2) Bottom view S(2) S(2) STL17N65M5 710 V 0.374 10 A(1) G(1) 1. The value is rated according to Rthj-case and limited by D(3) package Worldwide best RDS(on) * area Higher VDSS rating an... See More ⇒

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 stl17n3llh6.pdf pdf_icon

STL17N65M5

STL17N3LLH6 N-channel 30 V, 0.0038 , 17 A PowerFLAT (3.3x3.3) STripFET VI DeepGATE Power MOSFET Features RDS(on) Order code VDSS ID max. STL17N3LLH6 30 V 0.0045 17 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power los... See More ⇒

Detailed specifications: STL130N8F7, STL13DP10F6, STL13N60M2, STL13N65M2, STL15N65M5, STL160NS3LLH7, STL16N60M2, STL16N65M2, 18N50, STL180N4LLF6, STL18N60M2, STL18N65M2, STL18N65M5, STL19N65M5, STL20DN10F7, STL20NM20N, STL220N3LLH7

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