STL17N65M5 Datasheet and Replacement
Type Designator: STL17N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.374 Ohm
Package: POWERFLAT8X8HV
STL17N65M5 substitution
STL17N65M5 Datasheet (PDF)
stl17n65m5.pdf

STL17N65M5N-channel 650 V, 0.338 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL17N65M5 710 V 0.374 10 A(1)G(1)1. The value is rated according to Rthj-case and limited by D(3)package Worldwide best RDS(on) * area Higher VDSS rating an
stl17n3llh6.pdf

STL17N3LLH6N-channel 30 V, 0.0038 , 17 A PowerFLAT(3.3x3.3)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL17N3LLH6 30 V 0.0045 17 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power los
Datasheet: STL130N8F7 , STL13DP10F6 , STL13N60M2 , STL13N65M2 , STL15N65M5 , STL160NS3LLH7 , STL16N60M2 , STL16N65M2 , RU6888R , STL180N4LLF6 , STL18N60M2 , STL18N65M2 , STL18N65M5 , STL19N65M5 , STL20DN10F7 , STL20NM20N , STL220N3LLH7 .
History: SSF5NS70GB | EN2301 | AOD32324 | 2SK715 | BSS84PW | AM10N30-600I | IRFM3205
Keywords - STL17N65M5 MOSFET datasheet
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History: SSF5NS70GB | EN2301 | AOD32324 | 2SK715 | BSS84PW | AM10N30-600I | IRFM3205



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