STL260N3LLH6 Datasheet. Specs and Replacement

Type Designator: STL260N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 1230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm

Package: POWERFLAT5X6

STL260N3LLH6 substitution

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STL260N3LLH6 datasheet

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STL260N3LLH6

STL260N3LLH6 N-channel 30 V, 0.0011 typ., 260 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID STL260N3LLH6 30 V 0.0013 260 A (1) 1. The value is rated according Rthj-c 1 Very low on-resistance RDS(on) 2 3 Very low gate charge 4 High avalanche ruggedness PowerFLAT 5x6 Application... See More ⇒

 9.1. Size:692K  st
stl26nm60n.pdf pdf_icon

STL260N3LLH6

STL26NM60N N-channel 600 V, 0.160 , 19 A PowerFLAT (8x8) HV ultra low gate charge MDmesh II Power MOSFET Features VDSS @ RDS(on) Type ID S(3) Bottom view TJmax max S(3) S(3) G(1) STL26NM60N 650 V ... See More ⇒

Detailed specifications: STL19N65M5, STL20DN10F7, STL20NM20N, STL220N3LLH7, STL22N65M5, STL23NM50N, STL23NS3LLH7, STL24N60M2, IRF1405, STL2N80K5, STL30N10F7, STL30P3LLH6, STL31N65M5, STL33N60M2, STL34N65M5, STL35N6F3, STL36N55M5

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