STL260N3LLH6 Datasheet and Replacement
Type Designator: STL260N3LLH6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 1230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: POWERFLAT5X6
- MOSFET Cross-Reference Search
STL260N3LLH6 Datasheet (PDF)
stl260n3llh6.pdf

STL260N3LLH6N-channel 30 V, 0.0011 typ., 260 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL260N3LLH6 30 V 0.0013 260 A (1)1. The value is rated according Rthj-c1 Very low on-resistance RDS(on)23 Very low gate charge4 High avalanche ruggednessPowerFLAT5x6Application
stl26nm60n.pdf

STL26NM60NN-channel 600 V, 0.160 , 19 A PowerFLAT (8x8) HVultra low gate charge MDmesh II Power MOSFETFeaturesVDSS @ RDS(on) Type IDS(3) Bottom viewTJmax maxS(3)S(3)G(1)STL26NM60N 650 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BSP125 | IRF610P | P2003EEAA | KHB1D0N70G | NCE65N230K | 2N90G-TN3-R | 2SK1542
Keywords - STL260N3LLH6 MOSFET datasheet
STL260N3LLH6 cross reference
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History: BSP125 | IRF610P | P2003EEAA | KHB1D0N70G | NCE65N230K | 2N90G-TN3-R | 2SK1542



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