All MOSFET. STL2N80K5 Datasheet

 

STL2N80K5 Datasheet and Replacement


   Type Designator: STL2N80K5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: POWERFLAT5X6VHV
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STL2N80K5 Datasheet (PDF)

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STL2N80K5

STL2N80K5N-channel 800 V, 3.7 typ., 1.5 A Zener-protected MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHVDatasheet - production dataFeatures Order code VDS RDS(on)max. IDSTL2N80K5 800 V 4.5 1.5 A Industrys lowest RDS(on)1 Industrys best figure of merit (FoM)23 Ultra low gate charge4 100% avalanche testedPowerFLAT 5x6 VHV Zener-

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT8024B2VFR | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | 2312 | STD4N62K3

Keywords - STL2N80K5 MOSFET datasheet

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