STL35N6F3 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL35N6F3
Marking Code: 35N6F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13.6 nC
trⓘ - Rise Time: 2.9 nS
Cossⓘ - Output Capacitance: 173 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: POWERFLAT5X6
STL35N6F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL35N6F3 Datasheet (PDF)
stl35n6f3.pdf
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100