All MOSFET. STL36N55M5 Datasheet

 

STL36N55M5 Datasheet and Replacement


   Type Designator: STL36N55M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: POWERFLAT8X8HV
 

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STL36N55M5 Datasheet (PDF)

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STL36N55M5

STL36N55M5N-channel 550 V, 0.066 typ., 22.5 A MDmesh VPower MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL36N55M5 600 V 0.090 22.5 A(1)D(3)1. The value is rated according to Rthj-case and limited by package. 100% avalanche testedPowerFLAT 8x8 HV

Datasheet: STL260N3LLH6 , STL2N80K5 , STL30N10F7 , STL30P3LLH6 , STL31N65M5 , STL33N60M2 , STL34N65M5 , STL35N6F3 , EMB04N03H , STL38N65M5 , STL3N10F7 , STL3NK40 , STL3NM60N , STL40C30H3LL , STL40N10F7 , STL40N75LF3 , STL42P4LLF6 .

History: HY6N60T | IXFK170N10P | AUIRF7640S2TR | HY6N60D | CEB85A3 | STL3NK40 | HY75N10T

Keywords - STL36N55M5 MOSFET datasheet

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