STL36N55M5 Datasheet. Specs and Replacement

Type Designator: STL36N55M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: POWERFLAT8X8HV

STL36N55M5 substitution

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STL36N55M5 datasheet

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STL36N55M5

STL36N55M5 N-channel 550 V, 0.066 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet production data Features VDS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL36N55M5 600 V 0.090 22.5 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package. 100% avalanche tested PowerFLAT 8x8 HV ... See More ⇒

Detailed specifications: STL260N3LLH6, STL2N80K5, STL30N10F7, STL30P3LLH6, STL31N65M5, STL33N60M2, STL34N65M5, STL35N6F3, AON7403, STL38N65M5, STL3N10F7, STL3NK40, STL3NM60N, STL40C30H3LL, STL40N10F7, STL40N75LF3, STL42P4LLF6

Keywords - STL36N55M5 MOSFET specs

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