STL36N55M5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL36N55M5
Marking Code: 36N55M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 62 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: POWERFLAT8X8HV
STL36N55M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL36N55M5 Datasheet (PDF)
stl36n55m5.pdf
STL36N55M5N-channel 550 V, 0.066 typ., 22.5 A MDmesh VPower MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL36N55M5 600 V 0.090 22.5 A(1)D(3)1. The value is rated according to Rthj-case and limited by package. 100% avalanche testedPowerFLAT 8x8 HV
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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