IXFT26N50Q Datasheet. Specs and Replacement

Type Designator: IXFT26N50Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 95 nC

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO268

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IXFT26N50Q datasheet

 ..1. Size:145K  ixys
 ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf pdf_icon

IXFT26N50Q

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 ... See More ⇒

 5.1. Size:158K  ixys
 ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf pdf_icon

IXFT26N50Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to... See More ⇒

 7.1. Size:197K  ixys
 ixfh26n60p ixft26n60p ixfv26n60p.pdf pdf_icon

IXFT26N50Q

IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement Mode IXFV26N60PS trr 200 ns Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Contin... See More ⇒

 7.2. Size:107K  ixys
 ixfh26n60q ixft26n60q.pdf pdf_icon

IXFT26N50Q

IXFH 26N60Q VDSS = 600 V HiPerFETTM IXFT 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V (TAB) VGS Continuous 20 V... See More ⇒

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Detailed specifications: IXFT12N100Q, IXFT13N80Q, IXFT14N100, IXFT15N100, IXFT15N80Q, IXFT20N60Q, IXFT20N80Q, IXFT24N100, IRFP260, IXFT26N60Q, IXFT30N50, IXFT32N50, IXFT32N50Q, IXFT40N30Q, IXFT4N100Q, IXFT52N30Q, IXFT58N20Q

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.