All MOSFET. STL4N10F7 Datasheet

 

STL4N10F7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL4N10F7
   Marking Code: 4N1F7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: POWERFLAT3.3X3.3

 STL4N10F7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL4N10F7 Datasheet (PDF)

 ..1. Size:891K  st
 stl4n10f7.pdf

STL4N10F7 STL4N10F7

STL4N10F7N-channel 100 V, 0.062 typ., 4.5 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 3.3x3.3 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL4N10F7 100 V 0.07 4.5 A N-channel enhancement mode123 Lower RDS(on) x area vs previous generation4 100% avalanche ratedPowerFLAT 3.3x3.3Applications Switching

 9.1. Size:949K  st
 stl4n80k5.pdf

STL4N10F7 STL4N10F7

STL4N80K5N-channel 800 V, 2.1 typ., 2.5 A MDMesh K5 Power MOSFET in a PowerFLAT 5x6 VHV packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTL4N80K5 800 V 2.5 2.5 A Industrys lowest RDS(on) x area1 Industrys best figure of merit (FoM) 23 Ultra low gate charge4 100% avalanche testedPowerFLAT 5x6 VHV Zener pro

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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