STL4N80K5 Datasheet. Specs and Replacement

Type Designator: STL4N80K5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: POWERFLAT5X6VHV

STL4N80K5 substitution

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STL4N80K5 datasheet

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STL4N80K5

STL4N80K5 N-channel 800 V, 2.1 typ., 2.5 A MDMesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code VDS RDS(on)max. ID STL4N80K5 800 V 2.5 2.5 A Industry s lowest RDS(on) x area 1 Industry s best figure of merit (FoM) 2 3 Ultra low gate charge 4 100% avalanche tested PowerFLAT 5x6 VHV Zener pro... See More ⇒

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 stl4n10f7.pdf pdf_icon

STL4N80K5

STL4N10F7 N-channel 100 V, 0.062 typ., 4.5 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL4N10F7 100 V 0.07 4.5 A N-channel enhancement mode 1 2 3 Lower RDS(on) x area vs previous generation 4 100% avalanche rated PowerFLAT 3.3x3.3 Applications Switching... See More ⇒

Detailed specifications: STL3NM60N, STL40C30H3LL, STL40N10F7, STL40N75LF3, STL42P4LLF6, STL42P6LLF6, STL45N65M5, STL4N10F7, IRF3205, STL4P2UH7, STL4P3LLH6, STL50NH3LL, STL51N3LLH5, STL55NH3LL, STL57N65M5, STL58N3LLH5, STL60N10F7

Keywords - STL4N80K5 MOSFET specs

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