All MOSFET. STL4P3LLH6 Datasheet

 

STL4P3LLH6 Datasheet and Replacement


   Type Designator: STL4P3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 79 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: POWERFLAT2X2
 

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STL4P3LLH6 Datasheet (PDF)

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 stl4p3llh6.pdf pdf_icon

STL4P3LLH6

STL4P3LLH6P-channel 30 V, 0.048 typ., 4 A STripFET H6 DeepGATEPower MOSFET in PowerFLAT 2x2 packageDatasheet - preliminary dataFeatures1Order code VDSS RDS(on) max. ID23STL4P3LLH6 30 V 0.056 at 10 V 4 A Very low on-resistance RDS(on)61 Very low gate charge5243 High avalanche ruggedness Low gate drive power lossPowerFLAT 2x2

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 stl4p2uh7.pdf pdf_icon

STL4P3LLH6

STL4P2UH7P-channel 20 V, 0.087 typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID12 STL4P2UH7 20 V 0.1 @ 4.5 V 4 A3 Ultra logic level6152 Extremely low on-resistance RDS(on)43 High avalanche ruggednessPowerFLAT 2x2 Low gate drive power losses

Datasheet: STL40N10F7 , STL40N75LF3 , STL42P4LLF6 , STL42P6LLF6 , STL45N65M5 , STL4N10F7 , STL4N80K5 , STL4P2UH7 , IRF840 , STL50NH3LL , STL51N3LLH5 , STL55NH3LL , STL57N65M5 , STL58N3LLH5 , STL60N10F7 , STL60NH3LL , STL60P4LLF6 .

History: IRFSL3107PBF | SI1013X | AON6206 | HMS21N60F

Keywords - STL4P3LLH6 MOSFET datasheet

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